MAGNETIC FIELD AND SURFACE INFLUENCES ON DOUBLE INJECTION PHENOMENA IN SEMICONDUCTORS. I: THE MAGNETODIODE EFFECT THEORY FOR THE SEMICONDUCTOR AND INSULATOR REGIMESCRISTOLOVEANU S.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 64; NO 2; PP. 683-695; ABS. FRE; BIBL. 26 REF.Article

CONTRIBUTION A L'ETUDE DE L'EFFET DE MAGNETOCONCENTRATION. UTILITE DU FORMALISME DE BOLTZMANN.CRISTOLOVEANU S.1977; J. PHYS., LETTRES; FR.; DA. 1977; VOL. 38; NO 2; PP. L69-L71; ABS. ANGL.; BIBL. 10 REF.Article

INFLUENCE DES SURFACES SUR L'EFFET ETTINGSHAUSEN. APPLICATION A LA CARACTERISATION DE SEMICONDUCTEURS A FAIBLE LARGEUR DE BANDE INTERDITE.CRISTOLOVEANU S.1976; ; S.L.; DA. 1976; PP. 1-97; BIBL. 2 P. 1/2; (THESE INST. NATL. POLYTECH.; GRENOBLE)Thesis

MAGNETIC FIELD AND SURFACE INFLUENCES ON DOUBLE INJECTION PHENOMENA IN SEMICONDUCTORS. II: THE MAGNETODIODE EFFECT THEORY FOR THE DIFFUSION REGIMES, MAGNETODIODE EXPERIMENTS AND APPLICATIONSCRISTOLOVEANU S.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 65; NO 1; PP. 281-292; ABS. FRE; BIBL. 11 REF.Article

L'EFFET MAGNETODIODE ET SON APPLICATION AUX CAPTEURS MAGNETIQUES DE HAUTE SENSIBILITECRISTOLOVEANU S.1979; ONDE ELECTR.; FRA; DA. 1979; VOL. 59; NO 5; PP. 68-74; ABS. ENG; BIBL. 14 REF.Article

A review of the electrical properties of SIMOX substrates and their impact on device performanceCRISTOLOVEANU, S.Journal of the Electrochemical Society. 1991, Vol 138, Num 10, pp 3131-3139, issn 0013-4651Article

MAGNETOCONCENTRATION AND RELATED GALVANOMAGNETIC EFFECTS IN NON-INTRINSIC SEMICONDUCTORSCRISTOLOVEANU S; LEE JH.1980; J. PHYS. C, SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 32; PP. 5983-5997; BIBL. 20 REF.Article

INFLUENCE OF SURFACES ON THE ETTINGSHAUSEN EFFECT. APPLICATION TO THE CHARACTERIZATION OF NARROW-GAP SEMICONDUCTORS.CRISTOLOVEANU S; VIKTOROVITCH P.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 39; NO 1; PP. 109-116; ABS. FR.; BIBL. 12 REF.Article

TRANSVERSE DIFFUSION CURRENTS AS AN IMPORTANT SOURCE OF ERROR IN MAGNETORESISTANCE MEASUREMENTSCRISTOLOVEANU S; CHOVET A.1978; J. PHYS. C; GBR; DA. 1978; VOL. 11; NO 19; PP. 3981-3991; BIBL. 16 REF.Article

CARRIER CONCENTRATION UNDER HIGH MAGNETIC FIELDSCRISTOLOVEANU S; CHOVET A; LAKEOU S et al.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 5; PP. 927-938; BIBL. 18 REF.Article

HIGH-MAGNETIC-FIELD VAN DER PAUW METHOD: MAGNETORESISTANCE MEASUREMENT AND APPLICATIONSMARION D; CRISTOLOVEANU S; CHOVET A et al.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 4; PP. 125-130; BIBL. 23 REF.Article

AN INTEGRATED MAGNETIC SENSOR: THE SILICON ON SAPPHIRE SCHOTTKY MAGNETODIODECRISTOLOVEANU S; MOHAGHEGH A; DE PONTCHARRA J et al.1980; J. PHYS., LETTRES; FRA; DA. 1980; VOL. 41; NO 9; PP. L235-L237; ABS. FRE; BIBL. 13 REF.Article

TRANSPORT PROFILES, THE INFLUENCE OF INTERNAL STRESS AND POTENTIAL FLUCTUATIONS IN THIN SILICON FILMS ON SAPPHIRELEE JH; CRISTOLOVEANU S; CHOVET A et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 89; NO 1; PP. 13-18; BIBL. 7 REF.Conference Paper

HIGH FIELD MAGNETORESISTANCE AND HALL EFFECT IN NEAR-INTRINSIC PBSNTE INFLUENCE OF CADMIUM DOPINGSIZOV FF; CRISTOLOVEANU S; KONDRATENKO MM et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 58; NO 2; PP. K185-K188; BIBL. 9 REF.Article

EFFETS GALVANOMAGNETIQUES DANS LES SEMICONDUCTEURS ANISOTROPES INHOMOGENES. APPLICATION A LA CARACTERISATION DES FILMS DE SILICIUM SUR SAPHIRCRISTOLOVEANU S; LEE JH; CHOVET A et al.1980; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1980; VOL. 15; NO 3; PP. 725-732; ABS. ENG; BIBL. 13 REF.Article

SOME COMMENTS ON "THE EFFECT OF EFFECTIVE LIFETIME MODULATION IN SEMICONDUCTORS".CRISTOLOVEANU S; CHOVET A; KAMARINOS G et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 46; NO 1; PP. K13-K16; BIBL. 7 REF.Article

MAGNETORESISTANCE EFFECT IN NEAR INTRINSIC SEMICONDUCTORS. INFLUENCE OF SAMPLE GEOMETRY. A NEW METHOD FOR THE DETERMINATION OF CARRIER DENSITIES AND MOBILITIES.LAKEOU S; CRISTOLOVEANU S; CHOVET A et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 43; NO 1; PP. 213-222; ABS. FR.; BIBL. 24 REF.Article

DOUBLE-INJECTION PHENOMENA UNDER MAGNETIC FIELD IN SOS FILMS: A NEW GENERATION OF MAGNETOSENSITIVE MICRODEVICESAZAR MOHAGHEGH; CRISTOLOVEANU S; DE PONTCHARRA J et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 3; PP. 237-242; BIBL. 15 REF.Article

On the role of exact boundary conditions in phototransport phenomena; case of SI-GaAsKANG, K. N; CRISTOLOVEANU, S.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp K155-K159, issn 0031-8965Article

Hot-carrier degradation mechanisms in silicon-on-insulator MOSFETSCRISTOLOVEANU, S.Microelectronics and reliability. 1997, Vol 37, Num 7, pp 1003-1013, issn 0026-2714Article

Point-contact pseudo-MOSFET for In-situ characterization of As-crown silicon-on-insulator wafersCRISTOLOVEANU, S; WILLIAMS, S.IEEE electron device letters. 1992, Vol 13, Num 2, pp 102-104, issn 0741-3106Article

Adjustable confinement of the electron gas in dual-gate silicon-on-insulator MOSFET'sCRISTOLOVEANU, S; IOANNOU, D. E.Superlattices and microstructures. 1990, Vol 8, Num 1, pp 131-135, issn 0749-6036, 5 p.Article

Accurate technique for CV measurements on SOI structures excluding parasitic capacitance effectsJONG-HYUN LEE; CRISTOLOVEANU, S.IEEE electron device letters. 1986, Vol 7, Num 9, pp 537-539, issn 0741-3106Article

The field-assisted photomagnetoelectric effect: theory and experiment in semi-insulating GaAsCRISTOLOVEANU, S; KANG, K. N.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 4, pp 699-712, issn 0022-3719Article

Two-dimensional modeling of locally damaged short-channel MOSFET's operating in the linear regionHADDARA, H; CRISTOLOVEANU, S.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 2, pp 378-385, issn 0018-9383Article